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Ab initio molecular dynamics liquid-quench simulations and hybrid density functional calculations are performed to model the effects of room-temperature atomic fluctuations and photo-illumination on the structural and electronic properties of amorphous sub-stoichiometric In 2 O 2.96 . A large configurational ensemble is employed to reliably predict the distribution of localized defects as well as their response to the thermal and light activation. The results reveal that the illumination effects on the carrier concentration are greater in amorphous configurations with shorter In–O bond length and reduced polyhedral sharing as compared to the structures with a more uniform morphology. The obtained correlation between the photo-induced carrier density and the reduction in the number of fully coordinated In-atoms implies that metal oxides with a significant fraction of crystalline/amorphous interfaces would show a more pronounced response to illumination. Photo-excitation also produces In–O 2 –In defects that have not been previously found in sub-stoichiometric amorphous oxides; these defects are responsible for carrier instabilities due to overdoping. 

Abstract In alignment with the Materials Genome Initiative and as the product of a workshop sponsored by the US National Science Foundation, we define a vision for materials laboratories of the future in alloys, amorphous materials, and composite materials; chart a roadmap for realizing this vision; identify technical bottlenecks and barriers to access; and propose pathways to equitable and democratic access to integrated toolsets in a manner that addresses urgent societal needs, accelerates technological innovation, and enhances manufacturing competitiveness. Spanning three important materials classes, this article summarizes the areas of alignment and unifying themes, distinctive needs of different materials research communities, key science drivers that cannot be accomplished within the capabilities of current materials laboratories, and open questions that need further community input. Here, we provide a broader context for the workshop, synopsize the salient findings, outline a shared vision for democratizing access and accelerating materials discovery, highlight some case studies across the three different materials classes, and identify significant issues that need further discussion. Graphical abstract 

Microscopic mechanisms of the formation of H defects and their role in passivation of under-coordinated atoms, short- and long-range structural transformations, and the resulting electronic properties of amorphous In–Ga–O with In : Ga = 6 : 4 are investigated using computationally-intensive ab initio molecular dynamics simulations and accurate density-functional calculations. The results reveal a stark difference between H-passivation in covalent Si-based and ionic oxide semiconductors. Specifically, it is found that hydrogen doping triggers an extended bond reconfiguration and rearrangement in the network of shared polyhedra in the disordered oxide lattice, resulting in energy gains that outweigh passivation of dangling O-p-orbitals. The H-induced structural changes in the coordination and morphology favor a more uniform charge density distribution in the conduction band, in accord with the improved carrier mobility measured in H-doped In–Ga–O [W. Huang et al. , Proc. Natl. Acad. Sci. U. S. A. , 2020, 117 , 18231]. A detailed structural analysis helps interpret the observed wide range of infrared frequencies associated with H defects and also demonstrate that the room-temperature stability of OH defects is affected by thermal fluctuations in the surrounding lattice, promoting bond migration and bond switching behavior within a short picosecond time frame.